RAPD-analysis of soybean cell line with cross-resistance to tungsten and vanadium oxyanions
Tishchenko, E.N.; Mikhal'skaia, S.I.; Sergeeva, L.E.
Tsitologiia i Genetika 43(4): 39-44
2009
ISSN/ISBN: 0564-3783 PMID: 19938645 Document Number: 630374
The effect of vanadium oxyanions on genome of soybean (Glycine max L., Merr.) in tungsten-resistant cell line was studied. The line is resistant to V(5+)-oxyanions. RAPD-amplicons with identical length are differentially synthesized from DNAs of tungsten-resistant cell line as well as of the initial culture was shown by using the lethal dose of oxyanions W6+ and then V5+. The presence of instable loci in soybean genome under different stressors is discussed.
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